CVD Process

Plasma Enhanced CVD


Plasma-enhanced chemical vapor deposition is a plasma-based deposition method used to deposit material on a substrate surface. PECVD is commonly used for depositing silicon oxide/nitride, hydrogenated amorphous and microcrystalline silicon and carbon, Diamond-like carbon (DLC), semiconductors and oxides. The process involves introducing a gas mixture into the vacuum chamber, where a plasma is generated. The process gases are ionized and decomposed into ions and radicals, which react with the substrate via chemical reactions, leading to the deposition of a thin film on the substrate. The plasma can be generated using different methods such as radio frequency (RF), alternating current (AC), or direct current (DC) discharge between two electrodes. PECVD offers a higher deposition rate while maintaining a lower temperature compared to thermal CVD


PECVD is used to produce high-quality semiconductor and dielectric films required for
various applications, like low and high-power semiconductor devices, photovoltaic solar
cells’ active layers, metal-insulator-metal (MIM) capacitors, laser diodes, sensors, detectors, LEDs, thin film transistors, and more.

Key features

Deposited materials

Metals, Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials, Organics

Similar technologies

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Plasma Enhanced CVD

the right choice for obtaining large area compound materials mixing gaseous and/or liquid precursors at any temperature

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Chemical Vapor Deposition