CVD Process

Metalorganic CVD


Metalorganic Chemical Vapor Deposition is a method of depositing thin films on a substrate surface through a chemical reaction between one or more reactive gases and the substrate. Using this method is it possible to create high purity dielectric, metallic or semiconducting thin films. In the MOCVD process, ultrapure metalorganic precursor gases are introduced into a reactor, where they undergo pyrolysis on the semiconductor wafer. As a result, the subspecies are absorbed onto the wafer surface. The metalorganic precursor is introduced into the process chamber via a system known as “bubbler”, which uses an inert carrier gas (such as He or Ar) to transport the precursor liquid into the chamber. MOCVD operates at moderate pressures (1 to 760 Torr) in the gas phase.


MOCVD is commonly used in the production of laser diodes, LEDs, and semiconductors for
advanced optoelectronics, high power and highspeed electronics, enabling mass production of semiconductor heterostructures via bandgap engineering. Furthermore, MOCVD can be utilized to precisely fabricate 0D, 1D, and 2D nanomaterials.

Key features

Deposited materials

Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials, Organics

Similar technologies

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Metalorganic CVD

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Chemical Vapor Deposition