CVD Process

Inductively Coupled Plasma CVD


Inductively Coupled Plasma Chemical Vapour Deposition is a plasma-based deposition method used to deposit material on a substrate surface. This plasma is generated by an RF generator in an inductively coupled plasma (ICP) source, resulting in higher plasma densities compared to the capacitive coupled plasma (CCP) used in standard PECVD techniques.
The process gases are decomposed into ions and radicals, which are then deposited as thin films on the substrate surface. Due to the higher plasma density, the deposition process can be carried out at lower temperatures (as low as 100 °C), making it suitable for deposition on temperature-sensitive substrates such as polymers.


ICPCVD is a common method for depositing High-quality semiconductors and dielectrics for applications like low and high-power semiconductor devices, photovoltaic solar cells’ active layers, metalinsulator-metal (MIM) capacitors, laser diodes, sensors, detectors, LEDs, thin film transistors, and so on

Key features

Deposited materials

Metals, Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials, Organics

Similar technologies

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Inductively Coupled Plasma CVD

the right choice for obtaining high density compound materials mixing gaseous and/or liquid precursors at any temperature

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Chemical Vapor Deposition