Ion Beam Sputtering
Ion Beam Sputtering (IBS) is a deposition technique that uses an ion source to sputter a target material onto a substrate. The system includes a rotary multitarget assembly, a substrate, and an ion source used to sputter the target and deposit it onto the substrate surface. Using gas (Ar) injection into the ion gun, a high electric field causes gas ionization, creating a plasma inside the source region. The ions generated in the plasma are accelerated from the source to the target, creating a collimated ion beam with a well-defined ionic energy and density. This beam impacts the target material, causing it to sputter towards the substrate. Plasma in IBS is confined within the ion source, allowing the chamber pressure to be maintained low. An additional ion beam source can be used to bombard the substrate with Ar ions to improve the density or reactive gas ions to maintain stoichiometry. Substrate heating during deposition can improve overall sputtering performance.
Ion beam applications encompass a wide range of processes that range over deposition, etching, or their combination. These applications include laser facet coating, mirrors for ring laser gyroscopes, X-ray optics, infrared sensors, telecom optic filters, Magnetic Random Access Memory (MRAM), dielectrics, spintronics, and superconductors
Metals, Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials
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