CVD Process

Atomic Layer Deposition


Atomic Layer Deposition (ALD) is a method of depositing thin films on a substrate surface through a chemical reaction between one or more reactive gases and the substrate. It is an advanced deposition technique that enables the deposition of ultra-thin films with exceptional precision. During ALD process, one or more reactive gases are introduced into a vacuum chamber, where they react with the substrate surface to deposit a thin film via a chemical reaction. This deposition method involves introducing gas phase precursors into the process chamber one by one, in a series of sequential, non-overlapping pulses. By reacting sequentially with the surface of the substrate, each precursor forms a self-limiting layer, and the reaction stops when all the reactive sites are consumed. Through repeated exposure to separate precursors, a thin film is slowly deposited


MOCVD is commonly used in the production of laser diodes, LEDs, and semiconductors for
advanced optoelectronics, high power and highspeed electronics, enabling mass production of semiconductor heterostructures via bandgap engineering. Furthermore, MOCVD can be utilized to precisely fabricate 0D, 1D, and 2D nanomaterials.

Key features

Deposited materials

Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials, Organics

Similar technologies

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Atomic Layer Deposition

the most advanced choice for obtaining compound materials mixing gaseous and liquid precursors

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