Ion Beam Etching
Ion Beam Etching is an etching technique that utilizes an ion source to etch material from a substrate surface with excellent uniformity and precision. IBE can be used on a variety of materials, including metals, oxides, semiconductors, and organics. This etching method involves the use of a beam of high-energy charged particles, usually Argon, to physically remove material from the surface of a sample. These ions are created within an ion source, from where they are accelerated to high energies through an electric field and then focused into a beam with the help of magnetic or electrostatic lenses. When the ion beam is directed at the sample surface, it collides with the atoms in the material, causing them to be ejected from the surface. The process can be precisely controlled by adjusting the energy of the ion beam and the angle at which it is directed
RIE applications range from low and high-power semiconductors for trenches and vias realization, MEMS for elimination of sacrificial material and general feature definition, de-processing and failure analysis, which makes RIE a key technique to be available in most semiconductor R&D and production facilities.
Metals, Oxides, Nitrides, Carbides, Semiconductors, Carbon Based Materials, Organics
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